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| inchange semiconductor product specification silicon npn power transistors 2N5294 2n5296 2n5298 description ? with to-220 package ? high power dissipation applications ? power amplifier and medium speed switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2N5294 80 2n5296 60 v cbo collector-base voltage 2n5298 open emitter 80 v 2N5294 70 2n5296 40 v ceo collector-emitter voltage 2n5298 open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a i b base current 2 a p t total power dissipation t c =25 ?? 36 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 3.47 ??/w
inchange semiconductor product specification 2 silicon npn power transistors 2N5294 2n5296 2n5298 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N5294 70 2n5296 40 v ceo(sus) collector-emitter sustaining voltage 2n5298 i c =0.1a ;i b =0 60 v 2N5294 i c =0.5a;i b =0.05a 2n5296 i c =1.0a;i b =0.1a v cesat collector-emitter saturation voltage 2n5298 i c =1.5a;i b =0.15a 1.0 v 2N5294 i c =0.5a ; v ce =4v 1.1 2n5296 i c =1.0a ; v ce =4v 1.3 v be base-emitter on voltage 2n5298 i c =1.5a ; v ce =4v 1.5 v 2N5294/5298 v ce =65v;v be =1.5v t c =150 ?? 0.5 3.0 i cev collector cut-off current 2n5296 v ce =35v;v be =1.5v t c =150 ?? 2.0 5.0 ma i cer collector cut-off current 2N5294/5298 v ce =50v;r be =100 |? t c =150 ?? 0.5 2.0 ma 2N5294 v eb =7v; i c =0 i ebo emitter cut-off current 2n5296/5298 v eb =5v; i c =0 1.0 ma 2N5294 i c =0.5a ; v ce =4v 2n5296 i c =1.0a ; v ce =4v 30 120 h fe dc current gain 2n5298 i c =1.5a ; v ce =4v 20 80 f t transition frequency i c =0.2a ; v ce =4v 0.8 mhz 2N5294 i c =0.5a;i b =0.05a;v cc =30v 2n5296 i c =1.0a;i b =0.1a;v cc =30v t on turn-on time 2n5298 i c =1.5a;i b =0.15a;v cc =30v 5.0 | s 2N5294 i c =0.5a;i b =0.05a;v cc =30v 2n5296 i c =1.0a;i b =0.1a;v cc =30v t off turn-off time 2n5298 i c =1.5a;i b =0.15a;v cc =30v 15 | s inchange semiconductor product specification 3 silicon npn power transistors 2N5294 2n5296 2n5298 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) |
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